Theoretical Investigation of Quantum Confinements in Spherical PbSrSe Semiconductor Quantum Dots
Abstract
One of the IV-VI material systems that have shown promising growth and sustainability in optoelectronic applications is PbSrSe quantum dot structure (QDs) material. However, the material system belongs to the lead salt semiconductor group and has a constant energy surface with prolate ellipsoids of revolution, as well as a strongly nonparabolic energy band. In this study, the particle in a box model based on the effective mass approximation is used to theoretically investigate quantum confinement in PbSrSe spherical semiconductor quantum dots. For the first four excited states explored, it is found that the transition energies of quantum dot depends on the quantum dot size.
Dimensions
Published
2025-03-24
How to Cite
Theoretical Investigation of Quantum Confinements in Spherical PbSrSe Semiconductor Quantum Dots. (2025). Nigerian Journal of Theoretical and Environmental Physics, 3(1), 29-36. https://doi.org/10.62292/njtep.v3i1.2025.60
Issue
Section
Articles
Copyright & Licensing
How to Cite
Theoretical Investigation of Quantum Confinements in Spherical PbSrSe Semiconductor Quantum Dots. (2025). Nigerian Journal of Theoretical and Environmental Physics, 3(1), 29-36. https://doi.org/10.62292/njtep.v3i1.2025.60
Most read articles by the same author(s)
- Chinkata Joseph Uwaoma, C. l. Oriaku, U. Joseph, L. A. Nnanna, Theoretical Study of Exciton Properties of Dilute GaInAsN Semiconductors , Nigerian Journal of Theoretical and Environmental Physics: Vol. 2 No. 2 (2024): Nigerian Journal of Theoretical and Environmental Physics - Vol. 2 No. 2