Theoretical Study of Exciton Properties of Dilute GaInAsN Semiconductors
DOI:
https://doi.org/10.62292/njtep.v2i2.2024.52Keywords:
Bandstructure, GaInAsN semiconductor, Band anticrossing, Pseudopotential, Exciton Binding EnergyAbstract
In this research, the electronic band structure, electronic properties and the exciton binding energy of dilute quaternary GaInAsN alloy semiconductors are investigated. This study was aimed to theoretically study the exciton properties of dilute GaInAsN semiconductors. The effects of Nitrogen incorporation in InGaAs alloy was studied within the band anti-crossing model (BAC). The pseudopotential inputs within the virtual crystal approximation (VCA) was employed to make modifications for the nitrogen and indium related alloy disorder effects. The Harrison’s model used to study the bandstructure. In general, the results of our computations are in agreement with recent experimental findings. It is found that the presence of nitrogen in the GaInAsN alloy reduces the fundamental bandgap energy within the band anticrossing (BAC) model in the vicinity of the first Brillouin zone boundary, to . The heavy hole and electron effective masses, reduced mass, energy band gap, high frequency dielectric constant, static dielectric constant, the refractive indices, polarity, covalency, Bohr radius and binding energy are also modified by the nitrogen and indium fractions of the alloy. For all the alloy compositions studied, it was observed that the binding energies of the excitons vary between the values for InAs and GaAs . Also, the corresponding excitons Bohr radii vary between the values for InAs and GaAs . The information derived from the present study predicts that GaInAsN tunable binding energies and electronic properties are of great technological importance for mid-infrared (MIR) optoelectronics.
References
Baaziz, H., Charifi, Z., Reshak, A., Hamad, B. and Al-Douri Y. (2012). Structural and electronic properties of GaNxAs1-x alloys. Journal of Applied Physics A, 106, 687-696
Bhardwaj, P. and Das N. (2016). Exciton binding energy in bulk and Quantum well of semiconductors with non-parabolic energy bands. International Journal of Engineering sciences and Research Technology. 5, (11).
Bouarissa, N. and Boucenna, M. (2009). Band parameters for AlAs, InAs and their ternary mixed crystals. Journal of the Royal Swedish Academy of Sciences PhysicaScripta, 79. 015-701.
Bouarissa, N. and Saib, S. (2010). AB INITIO study of lattice vibration and polaron properties in zinc-blende AlGa1N alloys.Journal Applied Physics, 108, 113710.
Chiesa, M., Livraghi, S., Paganini, M.C., Salvadori, E. and Giamello, E. (2020). Nitrogen-doped semiconducting oxides. Implications on photochemical, photocatalytic and electronic properties derived from EPR spectroscopy. Journal of Chemical Science, 11, 6623-6641.
Gngerich, M., Klar, P.J., Heimbrodt, W., Volz, K., Khler, K., Wagner, J., Polimeni, A., Capizzi, M., and Gomeniuk, Y.V. (2006). Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1xNx with 0 x 0.03. Physica Status Solidi, 10, 1002.
Harrison, P. and Valavanis, A. (2016). Quantum wells, wires and dots: Theoretical and computational Physics of semiconductor nanostructures. John Wiley & sons. Ltd.
Hwaug, H. and Koch, S. W. (2009). Quantum theory of the optical and electronic properties of semiconductors. 5th edition, World scientific Publishing Company Plc. Ltd, Singapore. 484.
Koksal, K. and Sahin, M. (2012). The effect of dilute nitrogen on nonlinear optical properties of the InGaAsN/GaAs single quantum wells. The European Physical Journal B. 85, 333.
Lin, H. and Singh, J. (2009). Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting, Journal of applied physics, 105, 013-117.
Merabet, B., Lachebi, A. and Abid, H. (2011). Effect of nitrogen incorporation on the electronic and optical properties of AlGaAsN/GaAs quantum well lasers. Turkish Journal of Physics. 35, 13 22.
Perkins, J.D., Mascarenhas, A., Zhang, Y., Geisz, J.F., Friedman, D.J., Oslon, J.M., and Kurtz, S.R. (1999). Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1 with <0.03. Physics Review Letter. 82, 3312.
Potter, R.J. and Balkan, N. (2004).Optical properties of GaNAs and GaInAsN quantum wells. Journal of Physics: Condensed Matter. 16, S33-87.
Shan, W., Walukiewicz, W., III, J.W.A., Haller, E.E., Geisz, J.F., Friedman, D.J., Oslon, J.M., and Kurtz, S.R. (1999). Band Anticrossing in GaInNAs Alloys. Physical Review Letters. 82, 1221-1224.
Shhri, H. A., Bouarissa, N. and Khan, M. A. (2011). Exciton and polaron properties in GaxIn1-xAs ternary mixed crystals. Journal of Luminescence, 131, 2153-2159.
Stier, O., Grundmann, M. and Bimberg, D. (2017), Electronic and optical properties of strained quantum dots modeled by 8-band k.p theory. Physical Review B. 59, 5688-5701.
Suemune, I., Uesugi, K. and Walukiewicz, W. (2000). Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs. Applied Physics Letter. 77, 3021-3023.
Uma, P. M., Peter, A.J., Chang Woo, L. and Duque, C.A. (2016).Interband emission energy in a dilute nitride quaternary semiconductor quantum dot for longer wavelength applications. Journal of Physica E: Low-dimensional Systems and Nanostructures. 81, 102-107.
Uwaoma, C.J., Oriaku, C.I. and Ugochukwu J. (2024). Exciton binding energies of dilute quaternary GaInAsN alloy semiconductors. Maiden Research and Innovation Fair/Conference, Directorate of University Research and Administration, Michael Okpara University of Agriculture, Umudike, Pp. 499-508.
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. and Strano, M. S. (2012). Electronics and optoelectronics of Two-Dimensional Transition Metal Dichalcogenides. Journal of Nature Nanotechnology. 7, 699-712.
