Impact of Interfacial Layer Composition and Thickness on Schottky Diode Barrier Height and Ideality Factor

Dlama Yabwa; Akpevwe Ejiro Ohworho

doi:10.62292/njtep.v4i2.2026.128

Authors

Dlama Yabwa
yabwa.dlama@tsuniversity.edu.ng

Taraba State University
Akpevwe Ejiro Ohworho
Delta State University

Keywords:

Schottky diode, Semiconductor, Modified Cheung model, Electrical parameters

Abstract

This work studies the effect of an interfacial layer on the electrical properties of Schottky diodes contacts formed with three metals - Chromium (Cr), Tungsten (W), and Molybdenum (Mo) - in contact with n-type Germanium (Ge). The electrical parameters studied include the saturation current (Iₛ), barrier height ( ), ideality factor (n), and series resistance (Rₛ) at 300 K. Using Cheung’s model and the modified Cheung’s model, voltage values ranging from 0.09 V to 0.15 V were simulated, consistent with the operational conditions of the models. Results indicate that Cr/n-type Ge and Cr/interfacial-layer/n-type Ge provide the most efficient rectifying contacts, exhibiting optimal barrier heights and low series resistances. These findings highlight the significant role of interfacial layer composition and thickness in tuning Schottky diode performance.

Dimensions

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Impact of Interfacial Layer Composition and Thickness on Schottky Diode Barrier Height and Ideality Factor

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